Under the banner of the current CERN EP R&D programme on technologies for future experiments, ESE is leading research into the use of more modern IC technologies in HEP. The aim is to follow industrial trends in order to benefit from the intrinsic density of downscaled transistors, high speeds and low power consumption. The need to follow industry is also motivated by the future availability of newer technologies, and the obsolescence of older process lines. The new technologies present advantages but also challenges that are being addressed in this R&D activity.